王磊

研究领域

研究领域为计算凝聚态物理，主要致力于利用第一原理计算、分子动力学等材料计算方法研究拓扑电子、声子材料和低维纳米电子信息材料（超导材料、电荷密度波材料和磁性材料等）

研究方向

1. 超导材料和电荷密度波材料的第一性原理设计；

2. 磁性拓扑电子材料计算与设计；

3. 材料可合成性能计算评价；

4. 基于第一性原理的物质结构和相变研究；

目前在研的科研项目

     1.太阳成集团tyc122cc高层次人才引进科研启动项目 获批经费：250万 起止时间：2022.8- 2024.7

2.内蒙古自治区自然学基金青年科学基金 获批经费：10万 起止时间：2023.1- 2025.12

3.国家自然学基金青年科学基金 获批经费：30万 起止时间：2024.1- 2026.12

奖励、荣誉和学术兼职

获奖、荣誉

1. 2021.12 博士研究生国家奖学金

2. 2022.05 师昌绪奖学金一等奖

3. 2022.05 校优秀毕业生

4. 2022.05 安徽省优秀毕业生

5. 2022.06 校优秀博士学位论文

6.   2022.07 太阳成集团tyc122cc“骏马计划”B1岗

7.   2022.08 中国科学院经理特别奖

8.   2023   中国科学院优秀博士学位论文

学术兼职

美国物理学会旗下杂志Physical Review B和Physical Review Materials审稿人。

主要论著

通讯作者：

1. T. Han, S. Wang, B. Han, Y. Liu, F. Li*, and L. Wang*, Two-Dimensional Potassium Borides with Hidden Kagome-like Lattice: Topological Semimetals, van Hove Singularities, and Superconductivity, Phys. Rev. B 107, 235154 (2023).  (IF: 3.7)

2. S. Wang, S. Wang, R. Liu, L. Sai, L. Wang*, and F. Li*, Coexistence of Electronic and Phononic Dirac Points in TiB₂ Monolayer with Inverse Sandwich Motif, J. Phys. Chem. C (2023). (IF: 3.7)

第一作者，共同第一作者和其他：

1. L. Wang, Y. Shi, M. Liu, A. Zhang, Y.-L. Hong, R. Li, Q. Gao, M. Chen*, W. Ren, H.-M. Cheng, Y. Li, and X.-Q. Chen*, Intercalated Architecture of MA₂Z₄ Family Layered van Der Waals Materials with Emerging Topological, Magnetic and Superconducting Properties. Nature Communications 12, 2361 (2021).   (IF: 16.6)

2. L. Wang, M. Liu, J. Li, R. Li, H. Ma, and X.-Q. Chen*, Topological Nodal Line and Superconductivity of Highly Thermally Stable Two-Dimensional TiB₄. Phys. Rev. B 104, 195123 (2021).  (IF: 3.7)

3. L. Wang, Y. Jiang, J. Liu, S. Zhang, J. Li, P. Liu, Y. Sun, H. Weng, and X.-Q. Chen*, Two-Dimensional Obstructed Atomic Insulators with Fractional Corner Charge in the MA₂Z₄ Family, Phys. Rev. B 106, 155144 (2022). (IF: 3.7)

4. Y.-L. Hong, Z. Liu, L. Wang, T. Zhou, W. Ma, C. Xu, S. Feng, L. Chen, M.-L. Chen, D.-M. Sun, X.-Q. Chen, H.-M. Cheng, and W. Ren*, Chemical Vapor Deposition of Layered Two-Dimensional MoSi₂N₄ Materials. Science 369, 670 (2020). (Co-first author)  (IF: 56.9)

5. Z. Liu, L. Wang, Y.-L. Hong, X.-Q. Chen, H.-M. Cheng, and W. Ren*, Two-Dimensional Superconducting MoSi₂N₄(MoN)_4n Homologous Compounds, National Science Review nwac273 (2023). (Co-first author)  (IF: 20.6)

6. Z. Guo, L. Wang, M. Han, E. Zhao, L. Zhu, W. Guo, J. Tan, B. Liu, X.-Q. Chen, and J. Lin, One-Step Growth of Bilayer 2H–1T′ MoTe₂ van Der Waals Heterostructures with Interlayer-Coupled Resonant Phonon Vibration, ACS Nano 16, 11268 (2022). (Co-first author) (IF: 17.1)

7. S.-C. Zhu, L. Wang, J.-Y. Qu, J.-J. Wang, T. Frolov, X.-Q. Chen, and Q. Zhu*, Computational Design of Flexible Electrides with Nontrivial Band Topology. Phys. Rev. Materials 3, 024205 (2019). (Co-first author)  (IF: 3.4)

8. C. Shen, L. Wang, D. Wei, Y. Zhang, G. Qin, X.-Q. Chen, and H. Zhang*, Two-dimensional layered MSi₂N₄ (M = Mo, W) as promising thermal management materials: a comparative study. Phys. Chem. Chem. Phys. 24, 3086-3093 (2022). (Co-first author)  (IF:3.3)

9. G., S. Ghosh, L. Wang, J. Bursik, A. Grytsiv, M. Kerber, E. Bauer, R. C. Mallik, X.-Q. Chen, M. Zehetbauer, P. Rogl, Half-Heusler alloys: Enhancement of ZT after severe plastic deformation (ultra-low thermal conductivity). Acta Materialia 183, 285–300 (2020). (IF:9.4)

10. R. Li, J. Li, L. Wang, J. Liu, H. Ma, H.-F. Song, D. Li, Y. Li, X.-Q. Chen, Underlying Topological Dirac Nodal Line Mechanism of the Anomalously Large Electron-Phonon Coupling Strength on a Be(0001) Surface. Phys. Rev. Lett. 123, 136802 (2019).  (IF:8.6)

11. J. Li, L. Wang, J. Liu, R. Li, Z. Zhang, X.-Q. Chen, Topological phonons in graphene. Phys. Rev. B 101, 081403(R) (2020).  (IF: 3.7)

12. S. Ullah, L. Wang, J. Li, R. Li, X.-Q. Chen, Structural, elastic, and electronic properties of topological semimetal WC-type MX family by first-principles calculation. Chinese Phys. B 28, 077105 (2019). (IF: 1.7)

13. Q. Xie, L. Wang, J. Li, R. Li, X.-Q. Chen, General principles to high-throughput constructing two-dimensional carbon allotropes. Chinese Phys. B 29, 037306 (2020). (IF: 1.7)